Abstract Details
| Chemical Cleaning of the InGaAs and the InAlAs Surfaces Using HCl, HF and H2SO4 | |
|---|---|
| Abstract ID | MAT-10 |
| Presenter | Steven Sun |
| Presentation Type | Poster |
| Full Author List | Steven Yun Sun (1) , Piero Pianetta (1) , Po-Ta Chen (2) , Masaharu Kobayashi (2) , Yoshio Nishi (2) , Niti Goel (3) , Michael Garner (3) , Wilman Tsai (3) |
| Affiliations | (1) Stanford Synchrotron Radiation Laboratory (2) Department of Electric Engineering, Stanford University (3) Intel Corporation |
| Category | Materials Science |
| Abstract | The surface cleaning of InGaAs and InAlAs using acids is studied using Synchrotron Radiation Photoelectron Spectroscopy. HCl, HF and H2SO4 solutions are investigated. The results do not depend on the choice of acid or the concentration used in this study. Cleaned InGaAs surface is oxide free but small amount of aluminum oxide remains on cleaned InAlAs surface. Elemental arsenic build-up is observed on both surfaces after acid treatment. This is very similar to acid cleaning of GaAs. The similarities indicate that the chemical reactions in the cleaning process are dominated by arsenic chemistry instead of the group III elements. |
| Footnotes | |
| Funding Acknowledgement | This research was carried out at the Stanford Synchrotron Radiation Laboratory, a national user facility operated by Stanford University on behalf of the U.S. Department of Energy, Office of Basic Energy Sciences. |