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Abstract Details
Epitaxial Growth of YBa2Cu4O8 Films from a Dense Amorphous Precursor
| Speaker | Gertjan Koster (Stanford University) |
| Full Author List | G. Koster (1), S. Brennan (2), J.-H. Lee (1), T.H. Geballe (1), (none) (0), (none) (0), (none) (0), (none) (0), (none) (0), (none) (0) |
| Affiliations | 1. Geballe Laboratory for Advanced Materials, Stanford University, Stanford, CA, USA,
2. Stanford Synchrotron Radiation Laboratory, SLAC, Stanford University, Stanford, CA, USA,
3. (none),
4. (none),
5. (none),
6. (none),
7. (none),
8. (none),
9. (none),
10. (none) |
| Category | Materials Science |
| Abstract |
Here we present real-time crystallization studies of YBa2Cu4O8 (Y-248) from dense amorphous precursor thin films using x-ray scattering. The samples, deposited on SrTiO3 and LSAT (Lanthanum-Strontium-Aluminate-Tantalate) single crystal substrates, were annealed on a hot stage installed on the BL 7-2 4-circle diffractometer and the development of the Y-248 (0 0 16) and (1 0 8) peaks were monitored as a function of time and temperature, while flowing oxygen gas. Modeling of the observed transformation kinetics is in progress.
Qualitatively, a thin layer of YBa2Cu3O7 (Y-123) forms very quickly at the film-substrate interface whereas the Y-248 film grows more slowly. The evolution of the Y-248 peak is strongly dependent on temperature ramp rate, final annealing temperature and initial composition, whereas the Y-123 phase, which manifests itself as a shoulder on the Y-248 (0 0 16) peak, seems little affected by the annealing parameters.
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