Home
Important Dates
Workshops
Program
Registration
Abstract Submission
List of Abstracts
List of Participants
SSRLUOEC Nominations
Lytle Award
Spicer Award
Exhibitors
Committees
Accommodations
Meeting Map
Travel
Visa Information
Tourism |
Abstract Details
A “Negative Electron Affinity” (NEA) Group III-nitride Photocathode Demonstrated as a High Performance Electron Source
| Speaker | Zhi Liu (Stanford University) |
| Full Author List | Z. Liu (1), (none) (0), (none) (0), (none) (0), (none) (0), (none) (0), (none) (0), (none) (0), (none) (0), (none) (0) |
| Affiliations | 1. Stanford University, Stanford, CA, USA,
2. (none),
3. (none),
4. (none),
5. (none),
6. (none),
7. (none),
8. (none),
9. (none),
10. (none) |
| Category | Materials Science |
| Abstract |
The need for a high performance (low energy spread <0.5eV, long lifetime >3 months per spot, emission stability <1%/hour) electron source continues as part of the development of new e-beam writing and inspection tools. We present measurements from a group III-nitride (indium gallium nitride) photocathode in a demountable vacuum system to measure energy spread, lifetime, and preliminary blanking effects. We show the results of cathodes operating in ultra high vacuum (UHV), high vacuum (HV) and oxygen rich backpressures. Our results show InGaN has a longitudinal energy spread of <300meV in reflection mode, flat lifetimes of 60 hours per illuminated spot where the yield changes by <10%, and stable emission with typical recoveries within 99% of original photocurrent for all blanking periods and vacuum conditions tested (0.5 to 10 minute periods).
|
|
SLAC /
SSRL